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Silicon carbide processing technology

wallpapers Tech 2021-01-04
The hardness of SiC is second only to diamond, and it can be used as an abrasive for grinding wheels and other abrasive tools. Therefore, it's mechanical processing mainly uses diamond grinding wheels for grinding, grinding and polishing. Among them, diamond grinding wheel grinding has the highest efficiency and is important for processing SiC. means. However, SiC material not only has the characteristics of high hardness, high brittleness and low fracture toughness also make it easy to cause brittle fracture of the material during the grinding process, leaving a surface fracture layer on the surface of the material, and causing serious surface and subsurface damage. , Affect processing accuracy. Therefore, an in-depth study of SiC grinding mechanism and sub-surface damage is of great significance for improving the efficiency of SiC grinding processing and surface quality.
 
The grinding mechanism of hard and brittle materials
 
Grind hard and brittle materials, and the abrasive has a rolling effect or a micro-cutting effect. When abrasive particles act on the surface with unevenness and cracks, as the grinding process progresses, part of the abrasive particles are pressed into the workpiece under the action of the grinding load, and the exposed tip is used to scratch the surface of the workpiece for micro-cutting. The other part of the abrasive particles rolls between the workpiece and the grinding disc to produce a rolling effect, which causes the surface of the workpiece to form micro-cracks, and the extension of the crack causes the surface of the workpiece to form brittle chips, so as to achieve the purpose of surface removal.
 
Because the tensile strength of hard and brittle materials is lower than the compressive strength, when a load is applied to the abrasive grains, microcracks will occur at the maximum tensile stress on the surface of the hard and brittle materials. When the crisscrossing cracks extend and cross each other, the part surrounded by the cracks will be broken and broken into small pieces. This is the basic process of chip generation and surface formation when grinding hard and brittle materials.
 
Since silicon carbide materials are highly hard and brittle materials, special grinding fluids are required. The main technical difficulty of silicon carbide grinding lies in the accurate measurement and control of the thinning thickness of high-hardness materials. Damage, microcracks and residues appear on the surface of the wafer after grinding. Stress, the thinning of silicon carbide wafers will produce greater warpage than silicon carbide wafers.

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