1. Product Science and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms set up in a tetrahedral latticework, largely in hexagonal (4H, 6H) or cubic (3C) polytypes, each exhibiting exceptional atomic bond strength.
The Si– C bond, with a bond energy of roughly 318 kJ/mol, is among the strongest in architectural ceramics, conferring impressive thermal stability, firmness, and resistance to chemical assault.
This robust covalent network causes a product with a melting point surpassing 2700 ° C(sublimes), making it among one of the most refractory non-oxide ceramics readily available for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC preserves mechanical stamina and creep resistance at temperature levels over 1400 ° C, where numerous steels and conventional porcelains begin to soften or degrade.
Its low coefficient of thermal growth (~ 4.0 × 10 ⁻⁶/ K) combined with high thermal conductivity (80– 120 W/(m · K)) allows fast thermal cycling without disastrous splitting, a vital quality for crucible performance.
These inherent residential or commercial properties originate from the well balanced electronegativity and comparable atomic sizes of silicon and carbon, which promote a very secure and densely packed crystal structure.
1.2 Microstructure and Mechanical Strength
Silicon carbide crucibles are usually produced from sintered or reaction-bonded SiC powders, with microstructure playing a definitive role in durability and thermal shock resistance.
Sintered SiC crucibles are generated with solid-state or liquid-phase sintering at temperature levels above 2000 ° C, typically with boron or carbon ingredients to boost densification and grain border communication.
This procedure yields a totally dense, fine-grained framework with marginal porosity (
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